Dorolti, E., Cario, L., Corraze, B., Janod, E., Vaju, C., Koo, H.-J., Kan, E. & Whangbo, M.-H. (2010) Half-Metallic Ferromagnetism and Large Negative Magnetoresistance in the New Lacunar Spinel GaTi3VS8. J. Am. Chem. Soc. 132 5704–5710. |
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Guiot, V., Janod, E., Corraze, B. & Cario, L. (2011) Control of the Electronic Properties and Resistive Switching in the New Series of Mott Insulators GaTa4Se8-yTey (0 <= y <= 6.5). Chem. Mat. 23 2611–2618. |
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Added by: Laurent Cournède 2016-03-10 21:32:20 |
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Querre, M., Janod, E., Cario, L., Tranchant, J., Corraze, B., Bouquet, V., Deputier, S., Cordier, S., Guilloux-Viry, M. & Besland, M.-P. (2016) Metal-insulator transitions in (V1-xCrx)(2)O-3 thin films deposited by reactive direct current magnetron co-sputtering. Thin Solid Films, 617 56–62. |
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Tranchant, J., Janod, E., Corraze, B., Stoliar, P., Rozenberg, M., Besland, M.-P. & Cario, L. (2015) Control of resistive switching in AM(4)Q(8) narrow gap Mott insulators: A first step towards neuromorphic applications. Phys. Status Solidi A-Appl. Mat. 212 239–244. |
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Tranchant, J., Pellaroque, A., Janod, E., Angleraud, B., Corraze, B., Cario, L. & Besland, M. .-P. (2014) Deposition of GaV4S8 thin films by H2S/Ar reactive sputtering for ReRAM applications. J. Phys. D-Appl. Phys. 47 065309. |
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Added by: Florent Boucher 2016-04-29 09:26:45 |
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Tranchant, J., Janod, E., Corraze, B., Besland, M. .-P. & Cario, L. (2015) From resistive switching mechanisms in AM(4)Q(8) Mott insulators to Mott memories. 2015 Ieee 7th International Memory Workshop (imw) New York. |
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Vaju, C., Cario, L., Corraze, B., Janod, E., Dubost, V., Cren, T., Roditchev, D., Braithwaite, D. & Chauvet, O. (2008) Electric-pulse-induced resistive switching and possible superconductivity in the Mott insulator GaTa4Se8. Microelectron. Eng. 85 2430–2433. |
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Added by: Laurent Cournède 2016-03-10 21:58:40 |
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