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Cario, L., Vaju, C., Corraze, B., Guiot, V. & Janod, E. (2010) Electric-Field-Induced Resistive Switching in a Family of Mott Insulators: Towards a New Class of RRAM Memories. Adv. Mater. 22 5193–+.   
Added by: Laurent Cournède 2016-03-10 21:37:31 Pop. 0.5%
Dorolti, E., Cario, L., Corraze, B., Janod, E., Vaju, C., Koo, H.-J., Kan, E. & Whangbo, M.-H. (2010) Half-Metallic Ferromagnetism and Large Negative Magnetoresistance in the New Lacunar Spinel GaTi3VS8. J. Am. Chem. Soc. 132 5704–5710.   
Added by: Laurent Cournède 2016-03-10 21:37:32 Pop. 0.5%
Janod, E., Dorolti, E., Corraze, B., Guiot, V., Salmon, S., Pop, V., Christien, F. & Cario, L. (2015) Negative Colossal Magnetoresistance Driven by Carrier Type in the Ferromagnetic Mott Insulator GaV4S8. Chem. Mat. 27 4398–4404.   
Added by: Laurent Cournède 2016-03-10 18:36:41 Pop. 0.5%
Singh, K., Simon, C., Cannuccia, E., Lepetit, M.-B., Corraze, B., Janod, E. & Cario, L. (2014) Orbital-Ordering-Driven Multiferroicity and Magnetoelectric Coupling in GeV4S8. Phys. Rev. Lett. 113 137602.   
Added by: Laurent Cournède 2016-03-10 21:01:55 Pop. 0.5%
Stoliar, P., Tranchant, J., Corraze, B., Janod, E., Besland, M.-P., Tesler, F., Rozenberg, M. & Cario, L. (2017) A Leaky-Integrate-and-Fire Neuron Analog Realized with a Mott Insulator. Adv. Funct. Mater. 27 1604740.   
Last edited by: Richard Baschera 2017-04-11 13:30:43 Pop. 0.5%
Stoliar, P., Rozenberg, M., Janod, E., Corraze, B., Tranchant, J. & Cario, L. (2014) Nonthermal and purely electronic resistive switching in a Mott memory. Phys. Rev. B, 90 045146.   
Added by: Laurent Cournède 2016-03-10 21:01:55 Pop. 0.5%
Stoliar, P., Diener, P., Tranchant, J., Corraze, B., Briere, B., Ta-Phuoc, V., Bellec, N., Fourmigue, M., Lorcy, D., Janod, E. & Cario, L. (2015) Resistive Switching Induced by Electric Pulses in a Single-Component Molecular Mott Insulator. J. Phys. Chem. C, 119 2983–2988.   
Added by: Laurent Cournède 2016-03-10 18:36:42 Pop. 0.5%
Stoliar, P., Cario, L., Janod, E., Corraze, B., Guillot-Deudon, C., Salmon-Bourmand, S., Guiot, V., Tranchant, J. & Rozenberg, M. (2013) Universal Electric-Field-Driven Resistive Transition in Narrow-Gap Mott Insulators. Adv. Mater. 25 3222–3226.   
Added by: Laurent Cournède 2016-03-10 21:23:30 Pop. 0.5%
Tesler, F., Adda, C., Tranchant, J., Corraze, B., Janod, E., Cario, L., Stoliar, P. & Rozenberg, M. (2018) Relaxation of a Spiking Mott Artificial Neuron. Phys. Rev. Appl. 10 054001.   
Last edited by: Richard Baschera 2018-12-20 08:29:47 Pop. 0.5%
Tranchant, J., Pellaroque, A., Janod, E., Angleraud, B., Corraze, B., Cario, L. & Besland, M. .-P. (2014) Deposition of GaV4S8 thin films by H2S/Ar reactive sputtering for ReRAM applications. J. Phys. D-Appl. Phys. 47 065309.   
Added by: Florent Boucher 2016-04-29 09:26:45 Pop. 0.5%
Tranchant, J., Janod, E., Corraze, B., Besland, M. .-P. & Cario, L. (2015) From resistive switching mechanisms in AM(4)Q(8) Mott insulators to Mott memories. 2015 Ieee 7th International Memory Workshop (imw) New York.   
Last edited by: Richard Baschera 2016-09-12 09:10:34 Pop. 0.5%
wikindx 4.2.2 ©2014 | Références totales : 2626 | Requêtes métadonnées : 72 | Exécution de script : 0.10048 secs | Style : Harvard | Bibliographie : Bibliographie WIKINDX globale