IMN

Biblio. IMN

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Bouchoule, S., Chanson, R., Pageau, A., Cambril, E., Guilet, S., Rhallabi, A. & Cardinaud, C. (2015) Surface chemistry of InP ridge structures etched in Cl-2-based plasma analyzed with angular XPS. J. Vac. Sci. Technol. A, 33 05E124.   
Added by: Laurent Cournède 2016-03-10 18:36:41 Pop. 0.5%
Chanson, R., Rhallabi, A., Fernandez, M. C., Cardinaud, C., Bouchoule, S., Gatilova, L. & Talneau, A. (2012) Global Model of Cl-2/Ar High-Density Plasma Discharge and 2-D Monte-Carlo Etching Model of InP. IEEE Trans. Plasma Sci. 40 959–971.   
Added by: Laurent Cournède 2016-03-10 21:28:39 Pop. 0.5%
Chanson, R., Rhallabi, A., Fernandez, M. C. & Cardinaud, C. (2013) Modeling of InP Etching Under ICP Cl2/Ar/N2 Plasma Mixture: Effect of N2 on the Etch Anisotropy Evolution. Plasma Process. Polym. 10 213–224.   
Added by: Laurent Cournède 2016-03-10 21:23:31 Pop. 0.5%
Chanson, R., Bouchoule, S., Cardinaud, C., Petit-Etienne, C., Cambril, E., Rhallabi, A., Guilet, S. & Blanquet, E. (2014) X-ray photoelectron spectroscopy analysis of the effect of temperature upon surface composition of InP etched in Cl-2-based inductively coupled plasma. J. Vac. Sci. Technol. B, 32 011219.   
Added by: Florent Boucher 2016-04-29 09:26:45 Pop. 0.5%
Elmonser, L., Rhallabi, A., Gaillard, M., Landesman, J. P., Talneau, A., Pommereau, F. & Bouadma, N. (2007) Modeling of the chemically assisted ion beam etching process: Application to the GaAs etching by Cl-2/Ar+. J. Vac. Sci. Technol. A, 25 126–133.   
Added by: Laurent Cournède 2016-03-10 22:02:31 Pop. 0.75%
Lallement, L., Rhallabi, A., Cardinaud, C. & Fernandez, M. C. P. (2011) Modelling of fluorine based high density plasma for the etching of silica glasses. J. Vac. Sci. Technol. A, 29 051304.   
Added by: Laurent Cournède 2016-03-10 21:32:20 Pop. 0.5%
wikindx 4.2.2 ©2014 | Références totales : 2626 | Requêtes métadonnées : 53 | Exécution de script : 0.09193 secs | Style : Harvard | Bibliographie : Bibliographie WIKINDX globale