IMN

Biblio. IMN

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Cario, L., Vaju, C., Corraze, B., Guiot, V. & Janod, E. (2010) Electric-Field-Induced Resistive Switching in a Family of Mott Insulators: Towards a New Class of RRAM Memories. Adv. Mater. 22 5193–+.   
Added by: Laurent Cournède 2016-03-10 21:37:31 Pop. 0.25%
Dorolti, E., Cario, L., Corraze, B., Janod, E., Vaju, C., Koo, H.-J., Kan, E. & Whangbo, M.-H. (2010) Half-Metallic Ferromagnetism and Large Negative Magnetoresistance in the New Lacunar Spinel GaTi3VS8. J. Am. Chem. Soc. 132 5704–5710.   
Added by: Laurent Cournède 2016-03-10 21:37:32 Pop. 0.25%
Dubost, V., Cren, T., Vaju, C., Cario, L., Corraze, B., Janod, E., Debontridder, F. & Roditchev, D. (2009) Electric-Field-Assisted Nanostructuring of a Mott Insulator. Adv. Funct. Mater. 19 2800–2804.   
Added by: Laurent Cournède 2016-03-10 21:41:23 Pop. 0.25%
Dubost, V., Cren, T., Vaju, C., Cario, L., Corraze, B., Janod, E., Debontridder, F. & Roditchev, D. (2013) Resistive Switching at the Nanoscale in the Mott Insulator Compound GaTa4Se8. Nano Lett. 13 3648–3653.   
Added by: Laurent Cournède 2016-03-10 21:23:30 Pop. 0.5%
Guiot, V., Cario, L., Janod, E., Corraze, B., Phuoc, T. V., Rozenberg, M., Stoliar, P., Cren, T. & Roditchev, D. (2013) Avalanche breakdown in GaTa4Se8 (-) Te-x(x) narrow-gap Mott insulators. Nat. Commun. 4 1722.   
Added by: Laurent Cournède 2016-03-10 21:23:31 Pop. 0.25%
Guiot, V., Janod, E., Corraze, B. & Cario, L. (2011) Control of the Electronic Properties and Resistive Switching in the New Series of Mott Insulators GaTa4Se8-yTey (0 <= y <= 6.5). Chem. Mat. 23 2611–2618.   
Added by: Laurent Cournède 2016-03-10 21:32:20 Pop. 0.5%
Janod, E., Dorolti, E., Corraze, B., Guiot, V., Salmon, S., Pop, V., Christien, F. & Cario, L. (2015) Negative Colossal Magnetoresistance Driven by Carrier Type in the Ferromagnetic Mott Insulator GaV4S8. Chem. Mat. 27 4398–4404.   
Added by: Laurent Cournède 2016-03-10 18:36:41 Pop. 0.25%
Janod, E., Tranchant, J., Corraze, B., Querre, M., Stoliar, P., Rozenberg, M., Cren, T., Roditchev, D., Phuoc, V. T., Besland, M.-P. & Cario, L. (2015) Resistive Switching in Mott Insulators and Correlated Systems. Adv. Funct. Mater. 25 6287–6305.   
Last edited by: Richard Baschera 2020-04-07 13:02:41 Pop. 0.5%
Phuoc, T. V., Vaju, C., Corraze, B., Sopracase, R., Perucchi, A., Marini, C., Postorino, P., Chligui, M., Lupi, S., Janod, E. & Cario, L. (2013) Optical Conductivity Measurements of GaTa4Se8 Under High Pressure: Evidence of a Bandwidth-Controlled Insulator-to-Metal Mott Transition. Phys. Rev. Lett. 110 037401.   
Added by: Laurent Cournède 2016-03-10 21:23:31 Pop. 0.25%
Stoliar, P., Rozenberg, M., Janod, E., Corraze, B., Tranchant, J. & Cario, L. (2014) Nonthermal and purely electronic resistive switching in a Mott memory. Phys. Rev. B, 90 045146.   
Added by: Laurent Cournède 2016-03-10 21:01:55 Pop. 0.5%
Stoliar, P., Cario, L., Janod, E., Corraze, B., Guillot-Deudon, C., Salmon-Bourmand, S., Guiot, V., Tranchant, J. & Rozenberg, M. (2013) Universal Electric-Field-Driven Resistive Transition in Narrow-Gap Mott Insulators. Adv. Mater. 25 3222–3226.   
Added by: Laurent Cournède 2016-03-10 21:23:30 Pop. 0.5%
wikindx 4.2.2 ©2014 | Références totales : 2654 | Requêtes métadonnées : 71 | Exécution de script : 0.10232 secs | Style : Harvard | Bibliographie : Bibliographie WIKINDX globale