IMN

Biblio. IMN

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Corraze, B., Janod, E., Cario, L., Moreau, P., Lajaunie, L., Stoliar, P., Guiot, V., Dubost, V., Tranchant, J., Salmon, S., Besland, M. .-P., Phuoc, T. V., Cren, T., Roditchev, D., Stephant, N., Troadec, D. & Rozenberg, M. (2013) Electric field induced avalanche breakdown and non-volatile resistive switching in the Mott Insulators AM(4)Q(8). Eur. Phys. J.-Spec. Top. 222 1047–1056.   
Added by: Laurent Cournède 2016-03-10 21:23:30 Pop. 0.5%
Girault, B., Vidal, V., Thilly, L., Renault, P. .-O., Goudeau, P., LeBourhis, E., Villain-Valat, P., Geandier, G., Tranchant, J., Landesman, J. .-P., Tessier, P. .-Y., Angleraud, B., Besland, M. .-P., Djouadi, A. & Lecouturier, F. (2008) Small scale mechanical properties of polycrystalline materials: in situ diffraction studies. Int. J. Nanotechnol. 5 609–630.   
Added by: Laurent Cournède 2016-03-10 21:58:43 Pop. 0.75%
Querre, M., Tranchant, J., Corraze, B., Cordier, S., Bouquet, V., Deputier, S., Guilloux-Viry, M., Besland, M. .-P., Janod, E. & Cario, L. (2018) Non-volatile resistive switching in the Mott insulator (V1-xCrx)(2)O-3. Physica B-Condensed Matter, 536 327–330.   
Last edited by: Richard Baschera 2018-07-24 12:50:23 Pop. 0.5%
Rupp, J. A. J., Janod, E., Besland, M. .-P., Corraze, B., Kindsmüller, A., Querre, M., Tranchant, J., Cario, L., Dittmann, R., Waser, R. & Wouters, D. J. (2020) Competition between V2O3 phases deposited by one-step reactive sputtering process on polycrystalline conducting electrode. Thin Solid Films, 705 138063.   
Last edited by: Richard Baschera 2020-06-05 07:50:03 Pop. 1%
Souchier, E., Besland, M. .-P., Tranchant, J., Corraze, B., Moreau, P., Retoux, R., Estournes, C., Mazoyer, P., Cario, L. & Janod, E. (2013) Deposition by radio frequency magnetron sputtering of GaV4S8 thin films for resistive random access memory application. Thin Solid Films, 533 54–60.   
Added by: Laurent Cournède 2016-03-10 21:23:31 Pop. 0.5%
Stoliar, P., Rozenberg, M., Janod, E., Corraze, B., Tranchant, J. & Cario, L. (2014) Nonthermal and purely electronic resistive switching in a Mott memory. Phys. Rev. B, 90 045146.   
Added by: Laurent Cournède 2016-03-10 21:01:55 Pop. 0.5%
Tranchant, J., Angleraud, B., Han, X. L., Landesman, J. P. & Tessier, P. Y. (2007) Carbon nanochannels elaborated by buckle delamination control on patterned substrates. Appl. Phys. Lett. 91 013103.   
Added by: Laurent Cournède 2016-03-10 22:02:30 Pop. 0.75%
Tranchant, J., Sandrini, J., Janod, E., Sacchetto, D., Corraze, B., Besland, M. .-P., Ghanbaja, J., De Micheli, G., Gaillardon, P. .-E. & Cario, L. (2017)
Control of Resistive Switching in Mott Memories Based on TiN/AM(4)Q(8)/TiN MIM Devices
. Shingubara, S., Karim, Z., MagyariKope, B., Shima, H., Kubota, H., Park, J. G., Kobayashi, K., Goux, L., Bersuker, G. & Saito, Y. (Eds.), Nonvolatile Memories 5.
 
 
Last edited by: Richard Baschera 2018-07-24 12:41:41 Pop. 0.5%
Tranchant, J., Pellaroque, A., Janod, E., Angleraud, B., Corraze, B., Cario, L. & Besland, M. .-P. (2014) Deposition of GaV4S8 thin films by H2S/Ar reactive sputtering for ReRAM applications. J. Phys. D-Appl. Phys. 47 065309.   
Added by: Florent Boucher 2016-04-29 09:26:45 Pop. 0.5%
Tranchant, J., Janod, E., Cario, L., Corraze, B., Souchier, E., Leclercq, J. .-L., Cremillieu, P., Moreau, P. & Besland, M. .-P. (2013) Electrical characterizations of resistive random access memory devices based on GaV4S8 thin layers. Thin Solid Films, 533 61–65.   
Added by: Laurent Cournède 2016-03-10 21:23:31 Pop. 0.5%
Tranchant, J., Janod, E., Corraze, B., Besland, M. .-P. & Cario, L. (2015) From resistive switching mechanisms in AM(4)Q(8) Mott insulators to Mott memories. 2015 Ieee 7th International Memory Workshop (imw) New York.   
Last edited by: Richard Baschera 2016-09-12 09:10:34 Pop. 0.5%
Tranchant, J., Querre, M., Janod, E., Besland, M. .-P., Corraze, B. & Cario, L. 2018. Mott memory devices based on the Mott insulator (V1-xCrx)(2)O-3. Paper read at 2018 IEEE 10TH INTERNATIONAL MEMORY WORKSHOP (IMW).   
Last edited by: Richard Baschera 2018-12-20 08:11:35 Pop. 0.5%
Tranchant, J., Tessier, P. Y., Landesman, J. P., Djouadi, M. A., Angleraud, B., Renault, P. O., Girault, B. & Goudeau, P. (2008) Relation between residual stresses and microstructure in Mo(Cr) thin films elaborated by ionized magnetron sputtering. Surf. Coat. Technol. 202 2247–2251.   
Added by: Laurent Cournède 2016-03-10 21:58:42 Pop. 0.75%
Tranchant, J., Angleraud, B., Tessier, P. Y., Besland, M. P., Landesman, J. P. & Djouadi, M. A. (2006) Residual stress control in MoCr thin films deposited by ionized magnetron sputtering. Surf. Coat. Technol. 200 6549–6553.   
Added by: Florent Boucher 2016-05-12 13:21:37 Pop. 0.5%
wikindx 4.2.2 ©2014 | Références totales : 2626 | Requêtes métadonnées : 84 | Exécution de script : 0.22124 secs | Style : Harvard | Bibliographie : Bibliographie WIKINDX globale