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Girault, B., Vidal, V., Thilly, L., Renault, P. .-O., Goudeau, P., LeBourhis, E., Villain-Valat, P., Geandier, G., Tranchant, J., Landesman, J. .-P., Tessier, P. .-Y., Angleraud, B., Besland, M. .-P., Djouadi, A. & Lecouturier, F. (2008) Small scale mechanical properties of polycrystalline materials: in situ diffraction studies. Int. J. Nanotechnol. 5 609–630. |
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Querre, M., Tranchant, J., Corraze, B., Cordier, S., Bouquet, V., Deputier, S., Guilloux-Viry, M., Besland, M. .-P., Janod, E. & Cario, L. (2018) Non-volatile resistive switching in the Mott insulator (V1-xCrx)(2)O-3. Physica B-Condensed Matter, 536 327–330. |
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Rupp, J. A. J., Janod, E., Besland, M. .-P., Corraze, B., Kindsmüller, A., Querre, M., Tranchant, J., Cario, L., Dittmann, R., Waser, R. & Wouters, D. J. (2020) Competition between V2O3 phases deposited by one-step reactive sputtering process on polycrystalline conducting electrode. Thin Solid Films, 705 138063. |
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Souchier, E., Besland, M. .-P., Tranchant, J., Corraze, B., Moreau, P., Retoux, R., Estournes, C., Mazoyer, P., Cario, L. & Janod, E. (2013) Deposition by radio frequency magnetron sputtering of GaV4S8 thin films for resistive random access memory application. Thin Solid Films, 533 54–60. |
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Stoliar, P., Rozenberg, M., Janod, E., Corraze, B., Tranchant, J. & Cario, L. (2014) Nonthermal and purely electronic resistive switching in a Mott memory. Phys. Rev. B, 90 045146. |
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Tranchant, J., Sandrini, J., Janod, E., Sacchetto, D., Corraze, B., Besland, M. .-P., Ghanbaja, J., De Micheli, G., Gaillardon, P. .-E. & Cario, L. (2017) Control of Resistive Switching in Mott Memories Based on TiN/AM(4)Q(8)/TiN MIM Devices . Shingubara, S., Karim, Z., MagyariKope, B., Shima, H., Kubota, H., Park, J. G., Kobayashi, K., Goux, L., Bersuker, G. & Saito, Y. (Eds.), Nonvolatile Memories 5. |
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Tranchant, J., Angleraud, B., Tessier, P. Y., Besland, M. P., Landesman, J. P. & Djouadi, M. A. (2006) Residual stress control in MoCr thin films deposited by ionized magnetron sputtering. Surf. Coat. Technol. 200 6549–6553. |
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Tranchant, J., Querre, M., Janod, E., Besland, M. .-P., Corraze, B. & Cario, L. 2018. Mott memory devices based on the Mott insulator (V1-xCrx)(2)O-3. Paper read at 2018 IEEE 10TH INTERNATIONAL MEMORY WORKSHOP (IMW). |
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Tranchant, J., Janod, E., Corraze, B., Besland, M. .-P. & Cario, L. (2015) From resistive switching mechanisms in AM(4)Q(8) Mott insulators to Mott memories. 2015 Ieee 7th International Memory Workshop (imw) New York. |
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Tranchant, J., Angleraud, B., Han, X. L., Landesman, J. P. & Tessier, P. Y. (2007) Carbon nanochannels elaborated by buckle delamination control on patterned substrates. Appl. Phys. Lett. 91 013103. |
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Tranchant, J., Janod, E., Cario, L., Corraze, B., Souchier, E., Leclercq, J. .-L., Cremillieu, P., Moreau, P. & Besland, M. .-P. (2013) Electrical characterizations of resistive random access memory devices based on GaV4S8 thin layers. Thin Solid Films, 533 61–65. |
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Tranchant, J., Pellaroque, A., Janod, E., Angleraud, B., Corraze, B., Cario, L. & Besland, M. .-P. (2014) Deposition of GaV4S8 thin films by H2S/Ar reactive sputtering for ReRAM applications. J. Phys. D-Appl. Phys. 47 065309. |
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Tranchant, J., Tessier, P. Y., Landesman, J. P., Djouadi, M. A., Angleraud, B., Renault, P. O., Girault, B. & Goudeau, P. (2008) Relation between residual stresses and microstructure in Mo(Cr) thin films elaborated by ionized magnetron sputtering. Surf. Coat. Technol. 202 2247–2251. |
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Zgheib, J., Berthelot, L., Tranchant, J., Ginot, N., Besland, M. .-P., Caillard, A., Minea, T., Rhallabi, A. & Jouan, P. .-Y. (2023) Electron-enhanced high power impulse magnetron sputtering with a multilevel high power supply: Application to Ar/Cr plasma discharge. Journal of Vacuum Science & Technology A, 41 063003. |
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