| Corraze, B., Janod, E., Cario, L., Moreau, P., Lajaunie, L., Stoliar, P., Guiot, V., Dubost, V., Tranchant, J., Salmon, S., Besland, M. .-P., Phuoc, T. V., Cren, T., Roditchev, D., Stephant, N., Troadec, D. & Rozenberg, M. (2013) Electric field induced avalanche breakdown and non-volatile resistive switching in the Mott Insulators AM(4)Q(8). Eur. Phys. J.-Spec. Top. 222 1047–1056. |
|
| Added by: Laurent Cournède 2016-03-10 21:23:30 |
Pop. 1%
|
| Ghenzi, N., Rubi, D., Mangano, E., Gimenez, G., Lell, J., Zelcer, A., Stoliar, P. & Levy, P. (2014) Building memristive and radiation hardness TiO2-based junctions. Thin Solid Films, 550 683–688. |
|
| Added by: Florent Boucher 2016-04-29 09:26:46 |
Pop. 0.75%
|
| Guiot, V., Cario, L., Janod, E., Corraze, B., Phuoc, T. V., Rozenberg, M., Stoliar, P., Cren, T. & Roditchev, D. (2013) Avalanche breakdown in GaTa4Se8 (-) Te-x(x) narrow-gap Mott insulators. Nat. Commun. 4 1722. |
|
| Added by: Laurent Cournède 2016-03-10 21:23:31 |
Pop. 1%
|
| Quinteros, C., Zazpe, R., Marlasca, F. G., Golmar, F., Casanova, F., Stoliar, P., Hueso, L. & Levy, P. (2014) HfO2 based memory devices with rectifying capabilities. J. Appl. Phys. 115 024501. |
|
| Added by: Florent Boucher 2016-04-29 09:26:45 |
Pop. 0.75%
|
| Stoliar, P., Rozenberg, M., Janod, E., Corraze, B., Tranchant, J. & Cario, L. (2014) Nonthermal and purely electronic resistive switching in a Mott memory. Phys. Rev. B, 90 045146. |
|
| Added by: Laurent Cournède 2016-03-10 21:01:55 |
Pop. 1%
|
| Zazpe, R., Stoliar, P., Golmar, F., Llopis, R., Casanova, F. & Hueso, L. E. (2013) Resistive switching in rectifying interfaces of metal-semiconductor-metal structures. Appl. Phys. Lett. 103 073114. |
|
| Added by: Laurent Cournède 2016-03-10 21:23:30 |
Pop. 0.75%
|
