IMN

Biblio. IMN

Liste de références

Affichage de 1 - 39 de 39 (Bibliographie: Bibliographie WIKINDX globale)
Paramètres :
Auteur:  Cardinaud
Ordonner par

Croissant
Décroissant
Utiliser tout ce qui est coché 
Utiliser tout ce qui est affiché 
Utiliser tous les items 
Antoun, G., Tillocher, T., Girard, A., Lefaucheux, P., Faguet, J., Kim, H., Zhang, D., Wang, M., Maekawa, K., Cardinaud, C. & Dussart, R. (2022) Cryogenic nanoscale etching of silicon nitride selectively to silicon by alternating SiF4/O-2 and Ar plasmas. Journal of Vacuum Science & Technology A, 40.   
Last edited by: Richard Baschera 2022-10-17 15:19:39 Pop. 2.5%
Antoun, G., Girard, A., Tillocher, T., Lefaucheux, P., Faguet, J., Maekawa, K., Cardinaud, C. & Dussart, R. (2022) Quasi In Situ XPS on a SiOxFy Layer Deposited on Silicon by a Cryogenic Process. ECS J. Solid State Sci. Technol. 11 013013.   
Last edited by: Richard Baschera 2022-02-10 17:00:11 Pop. 3.25%
Antoun, G., Dussart, R., Tillocher, T., Lefaucheux, P., Cardinaud, C., Girard, A., Tahara, S., Yamazaki, K., Yatsuda, K., Faguet, J. & Maekawa, K. (2019) The role of physisorption in the cryogenic etching process of silicon. Japanese Journal of Applied Physics, 58 SEEB03.   
Last edited by: Richard Baschera 2019-07-25 07:42:14 Pop. 1.25%
Bailly, F., David, T., Chevolleau, T., Darnon, M., Posseme, N., Bouyssou, R., Ducote, J., Joubert, O. & Cardinaud, C. (2010) Roughening of porous SiCOH materials in fluorocarbon plasmas. J. Appl. Phys. 108 014906.   
Added by: Laurent Cournède 2016-03-10 21:37:32 Pop. 1%
Baudet, E., Sergent, M., Nemec, P., Cardinaud, C., Rinnert, E., Michel, K., Jouany, L., Bureau, B. & Nazabal, V. (2017) Experimental design approach for deposition optimization of RF sputtered chalcogenide thin films devoted to environmental optical sensors. Scientific Reports, 7 3500.   
Last edited by: Richard Baschera 2017-07-10 13:27:27 Pop. 0.75%
Baudet, E., Cardinaud, C., Girard, A., Rinnert, E., Michel, K., Bureau, B. & Nazabal, V. (2016) Structural analysis of RF sputtered Ge-Sb-Se thin films by Raman and X-ray photoelectron spectroscopies. Journal of Non-Crystalline Solids, 444 64–72.   
Last edited by: administrateur 2016-08-25 14:00:55 Pop. 1%
Bayiati, P., Tserepi, A., Petrou, P. S., Misiakos, K., Kakabakos, S. E., Gogolides, E. & Cardinaud, C. (2007) Biofluid transport on hydrophobic plasma-deposited fluorocarbon films. Microelectron. Eng. 84 1677–1680.   
Added by: Laurent Cournède 2016-03-10 22:02:30 Pop. 0.75%
Begou, T., Becheb, B., Goullet, A., Granier, A., Cardinaud, C., Gaviot, E., Raballand, V., Landesman, J. P. & Zyss, J. (2006) Photonics integrated circuits on plasma-polymer-HMDSO: Single-mode TE(00)-TM(00) straight waveguides, S-bends, Y-junctions and mach-zehnder interferometers. Iecon 2006 - 32nd Annual Conference on Ieee Industrial Electronics, Vols 1-11 New York.   
Added by: Florent Boucher 2016-05-12 13:21:38 Pop. 1.25%
Begou, T., Beche, B., Goullet, A., Landesman, J. P., Granier, A., Cardinaud, C., Gaviot, E., Camberlein, L., Grossard, N., Jezequel, G. & Zyss, J. (2007) First developments for photonics integrated on plasma-polymer-HMDSO: Single-mode TE00-TM00 straight waveguides. Opt. Mater. 30 657–661.   
Added by: Laurent Cournède 2016-03-10 22:02:29 Pop. 1.75%
Bouchoule, S., Vallier, L., Patriarche, G., Chevolleau, T. & Cardinaud, C. (2012) Effect of Cl-2- and HBr-based inductively coupled plasma etching on InP surface composition analyzed using in situ x-ray photoelectron spectroscopy. J. Vac. Sci. Technol. A, 30 031301.   
Added by: Laurent Cournède 2016-03-10 21:28:39 Pop. 1%
Boulard, F., Baylet, J. & Cardinaud, C. (2010) Influence of Cadmium Composition on CH4-H-2-Based Inductively Coupled Plasma Etching of Hg1-x Cd (x) Te. J. Electron. Mater. 39 1256–1261.   
Added by: Laurent Cournède 2016-03-10 21:37:32 Pop. 1.75%
Boulard, F., Baylet, J. & Cardinaud, C. (2009) Effect of Ar and N-2 addition on CH4-H-2 based chemistry inductively coupled plasma etching of HgCdTe. J. Vac. Sci. Technol. A, 27 855–861.   
Added by: Laurent Cournède 2016-03-10 21:41:24 Pop. 1%
Chanson, R., Rhallabi, A., Fernandez, M. C., Cardinaud, C., Bouchoule, S., Gatilova, L. & Talneau, A. (2012) Global Model of Cl-2/Ar High-Density Plasma Discharge and 2-D Monte-Carlo Etching Model of InP. IEEE Trans. Plasma Sci. 40 959–971.   
Added by: Laurent Cournède 2016-03-10 21:28:39 Pop. 1%
Dubosc, M., Casimirius, S., Besland, M. .-P., Cardinaud, C., Granier, A., Duvail, J. .-L., Gohier, A., Minea, T., Arnal, V. & Torres, J. (2007) Impact of the Cu-based substrates and catalyst deposition techniques on carbon nanotube growth at low temperature by PECVD. Microelectron. Eng. 84 2501–2505.   
Added by: Laurent Cournède 2016-03-10 22:02:29 Pop. 0.75%
Dubosc, M., Minea, T., Besland, M. P., Cardinaud, C., Granier, A., Gohier, A., Point, S. & Torres, J. (2006) Low temperature plasma carbon nanotubes growth on patterned catalyst. Microelectron. Eng. 83 2427–2431.   
Added by: Florent Boucher 2016-05-12 13:21:36 Pop. 0.75%
Edon, V., Hugon, M. .-C., Agius, B., Durand, O., Eypert, C. & Cardinaud, C. (2008) Investigation of lanthanum and hafnium-based dielectric films by X-ray reflectivity, spectroscopic ellipsometry and X-ray photoelectron spectroscopy. Thin Solid Films, 516 7974–7978.   
Added by: Laurent Cournède 2016-03-10 21:58:41 Pop. 0.75%
Edon, V., Li, Z., Hugon, M. .-C., Krug, C., Bastos, K. P., Miotti, L., Baumvol, I. J. R., Cardinaud, C., Durand, O. & Eypert, C. (2008) Electrical properties and interfacial characteristics of RuO2/HfAlOx/SiON/Si and RuO2/LaAlO3/SiON/Si capacitors. J. Electrochem. Soc. 155 H661–H668.   
Added by: Laurent Cournède 2016-03-10 21:58:43 Pop. 1.75%
Eon, D., Raballand, V., Cartry, G., Cardinaud, C., Vourdas, N., Argitis, P. & Gogolides, E. (2006) Plasma oxidation of polyhedral oligomeric silsesquioxane polymers. J. Vac. Sci. Technol. B, 24 2678–2688.   
Added by: Florent Boucher 2016-05-12 13:21:36 Pop. 1%
Eon, D., Raballand, V., Cartry, G. & Cardinaud, C. (2007) High density fluorocarbon plasma etching of methylsilsesquioxane SiOC(H) low-k material and SiC(H) etch stop layer: surface analyses and investigation of etch mechanisms. J. Phys. D-Appl. Phys. 40 3951–3959.   
Added by: Laurent Cournède 2016-03-10 22:02:29 Pop. 0.75%
Gaboriau, F., Cartry, G., Peignon, M. C. & Cardinaud, C. (2006) Etching mechanisms of Si and SiO2 in fluorocarbon ICP plasmas: Analysis of the plasma by mass spectrometry, Langmuir probe and optical emission spectroscopy. J. Phys. D-Appl. Phys. 39 1830–1845.   
Added by: Florent Boucher 2016-05-12 13:21:37 Pop. 0.75%
Gaucher, A., Martinez, E., Baylet, J. & Cardinaud, C. (2014) Quantitative Auger Electron Spectroscopic Analysis of Hg1-x Cd (x) Te. J. Electron. Mater. 43 1255–1262.   
Added by: Florent Boucher 2016-04-29 09:26:44 Pop. 0.75%
Gaucher, A., Baylet, J., Rothman, J., Martinez, E. & Cardinaud, C. (2013) Characterization of Plasma Etching Process Damage in HgCdTe. J. Electron. Mater. 42 3006–3014.   
Added by: Laurent Cournède 2016-03-10 21:23:29 Pop. 1%
Gaucher, A., Martinez, E., Baylet, J. & Cardinaud, C. (2014) Quantitative Auger Electron Spectroscopy Analysis of Hg1-x Cd (x) Te (vol 43, pg 1255, 2014). J. Electron. Mater. 43 2770–2770.   
Added by: Laurent Cournède 2016-03-10 21:01:55 Pop. 1%
Girard, A., Geneste, F., Coulon, N., Cardinaud, C. & Mohammed-Brahim, T. (2013) SiGe derivatization by spontaneous reduction of aryl diazonium salts. Appl. Surf. Sci. 282 146–155.   
Added by: Laurent Cournède 2016-03-10 21:23:30 Pop. 0.75%
Girard, A., Coulon, N., Cardinaud, C., Mohammed-Brahim, T. & Geneste, F. (2014) Effect of doping on the modification of polycrystalline silicon by spontaneous reduction of diazonium salts. Appl. Surf. Sci. 314 358–366.   
Added by: Laurent Cournède 2016-03-10 21:01:55 Pop. 1.75%
Godet, L., Fang, Z., Radovanov, S., Walther, S., Arevalo, E., Lallement, F., Scheuer, J. T., Miller, T., Lenoble, D., Cartry, G. & Cardinaud, C. (2006) Plasma doping implant depth profile calculation based on ion energy distribution measurements. J. Vac. Sci. Technol. B, 24 2391–2397.   
Added by: Florent Boucher 2016-05-12 13:21:36 Pop. 1%
Jacq, S., Cardinaud, C., Le Brizoual, L. & Granier, A. (2013) H atom surface loss kinetics in pulsed inductively coupled plasmas. Plasma Sources Sci. Technol. 22 055004.   
Added by: Laurent Cournède 2016-03-10 21:23:29 Pop. 0.75%
Lallement, L., Gosse, C., Cardinaud, C., Peignon-Fernandez, M. .-C. & Rhallabi, A. (2010) Etching studies of silica glasses in SF6/Ar inductively coupled plasmas: Implications for microfluidic devices fabrication. J. Vac. Sci. Technol. A, 28 277–286.   
Added by: Laurent Cournède 2016-03-10 21:37:33 Pop. 1%
Liu, B., Landesman, J. .-P., Leclercq, J. .-L., Rhallabi, A., Avella, M., Gonzalez, M. A., Jimenez, J., Guilet, S., Cardinaud, C. & Pommereau, F. (2006) InP surface properties under ICP plasma etching using mixtures of chlorides and hydrides New York, Ieee.   
Added by: Florent Boucher 2016-05-12 13:21:38 Pop. 0.75%
Liu, B., Landesman, J. .-P., Leclercq, J. .-L., Rhallabi, A., Cardinaud, C., Guilet, S., Pommereau, F., Avella, M., Gonzalez, M. A. & Jimenez, J. (2006) InP surface properties under ICP plasma etching using mixtures of chlorides and hydrides. Mater. Sci. Semicond. Process, 9 225–229.   
Added by: Florent Boucher 2016-05-12 13:21:38 Pop. 1%
Meyer, T., LeDain, G., Girard, A., Rhallabi, A., Bouška, M., Nemec, P., Nazabal, V. & Cardinaud, C. (2020) Etching of GeSe2 chalcogenide glass and its pulsed laser deposited thin films in SF6, SF6/Ar and SF6/O-2 plasmas. Plasma Sources Sci. Technol. 29 105006.   
Last edited by: Richard Baschera 2020-11-17 14:03:42 Pop. 1.25%
Meyer, T., Girard, A., Bouška, M., Baudet, E., Baillieul, M., Nemec, P., Nazabal, V. & Cardinaud, C. (2023) Mass spectrometry and in situ x-ray photoelectron spectroscopy investigations of organometallic species induced by the etching of germanium, antimony and selenium in a methane-based plasma. Plasma Sources Sci. Technol. 32 085003.   
Last edited by: Richard Baschera 2023-08-24 08:52:53 Pop. 3%
Meyer, T., Girard, A., LeDain, G., Rhallabi, A., Baudet, E., Nazabal, V., Nemec, P. & Cardinaud, C. (2021) Surface composition and micromasking effect during the etching of amorphous Ge-Sb-Se thin films in SF6 and SF6 /Ar plasmas. Applied Surface Science, 549 149192.   
Last edited by: Richard Baschera 2021-04-09 11:41:07 Pop. 2%
Pereira, J., Pichon, L. E., Dussart, R., Cardinaud, C., Duluard, C. Y., Oubensaid, E. H., Lefaucheux, P., Boufnichel, M. & Ranson, P. (2009) In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O-2 cryoetching process. Appl. Phys. Lett. 94 071501.   
Added by: Laurent Cournède 2016-03-10 21:41:24 Pop. 1%
Raballand, V., Cartry, G. & Cardinaud, C. (2007) A model for Si, SiCH, SiO2, SiOCH, and porous SiOCH etch rate calculation in inductively coupled fluorocarbon plasma with a pulsed bias: Importance of the fluorocarbon layer. J. Appl. Phys. 102 063306.   
Added by: Laurent Cournède 2016-03-10 22:02:29 Pop. 0.75%
Rhallabi, A., Chanson, R., Landesman, J. .-P., Cardinaud, C. & Fernandez, M. .-C. (2011) Atomic scale study of InP etching by Cl-2-Ar ICP plasma discharge. Eur. Phys. J.-Appl. Phys, 53 33606.   
Added by: Laurent Cournède 2016-03-10 21:32:21 Pop. 1%
Sarrazin, A., Posseme, N., Barros, P. P., Barnola, S., Claveau, G., Gharbi, A., Argoud, M., Chamiot-Maitral, G., Tiron, R., Nicolet, C., Navarro, C. & Cardinaud, C. (2016) PMMA removal selectivity to PS using dry etch approach: Sub-10nm patterning application. Lin, Q. & Engelmann, S. U. (Eds.), Advanced Etch Technology for Nanopatterning V Bellingham.   
Last edited by: Richard Baschera 2017-02-02 13:40:29 Pop. 0.75%
Tsougeni, K., Vourdas, N., Tserepi, A., Gogolides, E. & Cardinaud, C. (2009) Mechanisms of Oxygen Plasma Nanotexturing of Organic Polymer Surfaces: From Stable Super Hydrophilic to Super Hydrophobic Surfaces. Langmuir, 25 11748–11759.   
Added by: Laurent Cournède 2016-03-10 21:41:23 Pop. 1.75%
Verger, F., Nazabal, V., Colas, F., Nemec, P., Cardinaud, C., Baudet, E., Chahal, R., Rinnert, E., Boukerma, K., Peron, I., Deputier, S., Guilloux-Viry, M., Guin, J. P., Lhermite, H., Moreac, A., Compere, C. & Bureau, B. (2013) RF sputtered amorphous chalcogenide thin films for surface enhanced infrared absorption spectroscopy. Opt. Mater. Express, 3 2112–2131.   
Added by: Laurent Cournède 2016-03-10 21:23:29 Pop. 1%
wikindx 4.2.2 ©2014 | Références totales : 2830 | Requêtes métadonnées : 175 | Exécution de script : 0.49237 secs | Style : Harvard | Bibliographie : Bibliographie WIKINDX globale