| Antoun, G., Tillocher, T., Girard, A., Lefaucheux, P., Faguet, J., Kim, H., Zhang, D., Wang, M., Maekawa, K., Cardinaud, C. & Dussart, R. (2022) Cryogenic nanoscale etching of silicon nitride selectively to silicon by alternating SiF4/O-2 and Ar plasmas. Journal of Vacuum Science & Technology A, 40. |
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| Last edited by: Richard Baschera 2022-10-17 15:19:39 |
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| Antoun, G., Girard, A., Tillocher, T., Lefaucheux, P., Faguet, J., Maekawa, K., Cardinaud, C. & Dussart, R. (2022) Quasi In Situ XPS on a SiOxFy Layer Deposited on Silicon by a Cryogenic Process. ECS J. Solid State Sci. Technol. 11 013013. |
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| Last edited by: Richard Baschera 2022-02-10 17:00:11 |
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| Antoun, G., Dussart, R., Tillocher, T., Lefaucheux, P., Cardinaud, C., Girard, A., Tahara, S., Yamazaki, K., Yatsuda, K., Faguet, J. & Maekawa, K. (2019) The role of physisorption in the cryogenic etching process of silicon. Japanese Journal of Applied Physics, 58 SEEB03. |
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| Last edited by: Richard Baschera 2019-07-25 07:42:14 |
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| Bailly, F., David, T., Chevolleau, T., Darnon, M., Posseme, N., Bouyssou, R., Ducote, J., Joubert, O. & Cardinaud, C. (2010) Roughening of porous SiCOH materials in fluorocarbon plasmas. J. Appl. Phys. 108 014906. |
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| Added by: Laurent Cournède 2016-03-10 21:37:32 |
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| Baudet, E., Sergent, M., Nemec, P., Cardinaud, C., Rinnert, E., Michel, K., Jouany, L., Bureau, B. & Nazabal, V. (2017) Experimental design approach for deposition optimization of RF sputtered chalcogenide thin films devoted to environmental optical sensors. Scientific Reports, 7 3500. |
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| Last edited by: Richard Baschera 2017-07-10 13:27:27 |
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| Baudet, E., Cardinaud, C., Girard, A., Rinnert, E., Michel, K., Bureau, B. & Nazabal, V. (2016) Structural analysis of RF sputtered Ge-Sb-Se thin films by Raman and X-ray photoelectron spectroscopies. Journal of Non-Crystalline Solids, 444 64–72. |
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| Last edited by: administrateur 2016-08-25 14:00:55 |
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| Bayiati, P., Tserepi, A., Petrou, P. S., Misiakos, K., Kakabakos, S. E., Gogolides, E. & Cardinaud, C. (2007) Biofluid transport on hydrophobic plasma-deposited fluorocarbon films. Microelectron. Eng. 84 1677–1680. |
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| Added by: Laurent Cournède 2016-03-10 22:02:30 |
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| Begou, T., Beche, B., Goullet, A., Landesman, J. P., Granier, A., Cardinaud, C., Gaviot, E., Camberlein, L., Grossard, N., Jezequel, G. & Zyss, J. (2007) First developments for photonics integrated on plasma-polymer-HMDSO: Single-mode TE00-TM00 straight waveguides. Opt. Mater. 30 657–661. |
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| Added by: Laurent Cournède 2016-03-10 22:02:29 |
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| Begou, T., Becheb, B., Goullet, A., Granier, A., Cardinaud, C., Gaviot, E., Raballand, V., Landesman, J. P. & Zyss, J. (2006) Photonics integrated circuits on plasma-polymer-HMDSO: Single-mode TE(00)-TM(00) straight waveguides, S-bends, Y-junctions and mach-zehnder interferometers. Iecon 2006 - 32nd Annual Conference on Ieee Industrial Electronics, Vols 1-11 New York. |
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| Added by: Florent Boucher 2016-05-12 13:21:38 |
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| Bouchoule, S., Vallier, L., Patriarche, G., Chevolleau, T. & Cardinaud, C. (2012) Effect of Cl-2- and HBr-based inductively coupled plasma etching on InP surface composition analyzed using in situ x-ray photoelectron spectroscopy. J. Vac. Sci. Technol. A, 30 031301. |
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| Added by: Laurent Cournède 2016-03-10 21:28:39 |
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| Boulard, F., Baylet, J. & Cardinaud, C. (2009) Effect of Ar and N-2 addition on CH4-H-2 based chemistry inductively coupled plasma etching of HgCdTe. J. Vac. Sci. Technol. A, 27 855–861. |
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| Added by: Laurent Cournède 2016-03-10 21:41:24 |
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| Boulard, F., Baylet, J. & Cardinaud, C. (2010) Influence of Cadmium Composition on CH4-H-2-Based Inductively Coupled Plasma Etching of Hg1-x Cd (x) Te. J. Electron. Mater. 39 1256–1261. |
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| Added by: Laurent Cournède 2016-03-10 21:37:32 |
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| Chanson, R., Rhallabi, A., Fernandez, M. C., Cardinaud, C., Bouchoule, S., Gatilova, L. & Talneau, A. (2012) Global Model of Cl-2/Ar High-Density Plasma Discharge and 2-D Monte-Carlo Etching Model of InP. IEEE Trans. Plasma Sci. 40 959–971. |
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| Added by: Laurent Cournède 2016-03-10 21:28:39 |
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| Dubosc, M., Casimirius, S., Besland, M. .-P., Cardinaud, C., Granier, A., Duvail, J. .-L., Gohier, A., Minea, T., Arnal, V. & Torres, J. (2007) Impact of the Cu-based substrates and catalyst deposition techniques on carbon nanotube growth at low temperature by PECVD. Microelectron. Eng. 84 2501–2505. |
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| Added by: Laurent Cournède 2016-03-10 22:02:29 |
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| Dubosc, M., Minea, T., Besland, M. P., Cardinaud, C., Granier, A., Gohier, A., Point, S. & Torres, J. (2006) Low temperature plasma carbon nanotubes growth on patterned catalyst. Microelectron. Eng. 83 2427–2431. |
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| Added by: Florent Boucher 2016-05-12 13:21:36 |
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| Edon, V., Li, Z., Hugon, M. .-C., Krug, C., Bastos, K. P., Miotti, L., Baumvol, I. J. R., Cardinaud, C., Durand, O. & Eypert, C. (2008) Electrical properties and interfacial characteristics of RuO2/HfAlOx/SiON/Si and RuO2/LaAlO3/SiON/Si capacitors. J. Electrochem. Soc. 155 H661–H668. |
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| Added by: Laurent Cournède 2016-03-10 21:58:43 |
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| Edon, V., Hugon, M. .-C., Agius, B., Durand, O., Eypert, C. & Cardinaud, C. (2008) Investigation of lanthanum and hafnium-based dielectric films by X-ray reflectivity, spectroscopic ellipsometry and X-ray photoelectron spectroscopy. Thin Solid Films, 516 7974–7978. |
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| Added by: Laurent Cournède 2016-03-10 21:58:41 |
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| Eon, D., Raballand, V., Cartry, G. & Cardinaud, C. (2007) High density fluorocarbon plasma etching of methylsilsesquioxane SiOC(H) low-k material and SiC(H) etch stop layer: surface analyses and investigation of etch mechanisms. J. Phys. D-Appl. Phys. 40 3951–3959. |
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| Added by: Laurent Cournède 2016-03-10 22:02:29 |
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| Eon, D., Raballand, V., Cartry, G., Cardinaud, C., Vourdas, N., Argitis, P. & Gogolides, E. (2006) Plasma oxidation of polyhedral oligomeric silsesquioxane polymers. J. Vac. Sci. Technol. B, 24 2678–2688. |
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| Added by: Florent Boucher 2016-05-12 13:21:36 |
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| Gaboriau, F., Cartry, G., Peignon, M. C. & Cardinaud, C. (2006) Etching mechanisms of Si and SiO2 in fluorocarbon ICP plasmas: Analysis of the plasma by mass spectrometry, Langmuir probe and optical emission spectroscopy. J. Phys. D-Appl. Phys. 39 1830–1845. |
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| Added by: Florent Boucher 2016-05-12 13:21:37 |
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| Gaucher, A., Baylet, J., Rothman, J., Martinez, E. & Cardinaud, C. (2013) Characterization of Plasma Etching Process Damage in HgCdTe. J. Electron. Mater. 42 3006–3014. |
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| Added by: Laurent Cournède 2016-03-10 21:23:29 |
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| Gaucher, A., Martinez, E., Baylet, J. & Cardinaud, C. (2014) Quantitative Auger Electron Spectroscopic Analysis of Hg1-x Cd (x) Te. J. Electron. Mater. 43 1255–1262. |
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| Added by: Florent Boucher 2016-04-29 09:26:44 |
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| Gaucher, A., Martinez, E., Baylet, J. & Cardinaud, C. (2014) Quantitative Auger Electron Spectroscopy Analysis of Hg1-x Cd (x) Te (vol 43, pg 1255, 2014). J. Electron. Mater. 43 2770–2770. |
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| Added by: Laurent Cournède 2016-03-10 21:01:55 |
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| Girard, A., Coulon, N., Cardinaud, C., Mohammed-Brahim, T. & Geneste, F. (2014) Effect of doping on the modification of polycrystalline silicon by spontaneous reduction of diazonium salts. Appl. Surf. Sci. 314 358–366. |
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| Added by: Laurent Cournède 2016-03-10 21:01:55 |
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| Girard, A., Geneste, F., Coulon, N., Cardinaud, C. & Mohammed-Brahim, T. (2013) SiGe derivatization by spontaneous reduction of aryl diazonium salts. Appl. Surf. Sci. 282 146–155. |
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| Added by: Laurent Cournède 2016-03-10 21:23:30 |
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| Godet, L., Fang, Z., Radovanov, S., Walther, S., Arevalo, E., Lallement, F., Scheuer, J. T., Miller, T., Lenoble, D., Cartry, G. & Cardinaud, C. (2006) Plasma doping implant depth profile calculation based on ion energy distribution measurements. J. Vac. Sci. Technol. B, 24 2391–2397. |
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| Added by: Florent Boucher 2016-05-12 13:21:36 |
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| Jacq, S., Cardinaud, C., Le Brizoual, L. & Granier, A. (2013) H atom surface loss kinetics in pulsed inductively coupled plasmas. Plasma Sources Sci. Technol. 22 055004. |
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| Added by: Laurent Cournède 2016-03-10 21:23:29 |
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| Lallement, L., Gosse, C., Cardinaud, C., Peignon-Fernandez, M. .-C. & Rhallabi, A. (2010) Etching studies of silica glasses in SF6/Ar inductively coupled plasmas: Implications for microfluidic devices fabrication. J. Vac. Sci. Technol. A, 28 277–286. |
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| Added by: Laurent Cournède 2016-03-10 21:37:33 |
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| Liu, B., Landesman, J. .-P., Leclercq, J. .-L., Rhallabi, A., Cardinaud, C., Guilet, S., Pommereau, F., Avella, M., Gonzalez, M. A. & Jimenez, J. (2006) InP surface properties under ICP plasma etching using mixtures of chlorides and hydrides. Mater. Sci. Semicond. Process, 9 225–229. |
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| Added by: Florent Boucher 2016-05-12 13:21:38 |
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| Liu, B., Landesman, J. .-P., Leclercq, J. .-L., Rhallabi, A., Avella, M., Gonzalez, M. A., Jimenez, J., Guilet, S., Cardinaud, C. & Pommereau, F. (2006) InP surface properties under ICP plasma etching using mixtures of chlorides and hydrides New York, Ieee. |
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| Added by: Florent Boucher 2016-05-12 13:21:38 |
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| Meyer, T., LeDain, G., Girard, A., Rhallabi, A., Bouška, M., Nemec, P., Nazabal, V. & Cardinaud, C. (2020) Etching of GeSe2 chalcogenide glass and its pulsed laser deposited thin films in SF6, SF6/Ar and SF6/O-2 plasmas. Plasma Sources Sci. Technol. 29 105006. |
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| Last edited by: Richard Baschera 2020-11-17 14:03:42 |
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| Meyer, T., Girard, A., LeDain, G., Rhallabi, A., Baudet, E., Nazabal, V., Nemec, P. & Cardinaud, C. (2021) Surface composition and micromasking effect during the etching of amorphous Ge-Sb-Se thin films in SF6 and SF6 /Ar plasmas. Applied Surface Science, 549 149192. |
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| Last edited by: Richard Baschera 2021-04-09 11:41:07 |
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| Pereira, J., Pichon, L. E., Dussart, R., Cardinaud, C., Duluard, C. Y., Oubensaid, E. H., Lefaucheux, P., Boufnichel, M. & Ranson, P. (2009) In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O-2 cryoetching process. Appl. Phys. Lett. 94 071501. |
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| Added by: Laurent Cournède 2016-03-10 21:41:24 |
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| Raballand, V., Cartry, G. & Cardinaud, C. (2007) A model for Si, SiCH, SiO2, SiOCH, and porous SiOCH etch rate calculation in inductively coupled fluorocarbon plasma with a pulsed bias: Importance of the fluorocarbon layer. J. Appl. Phys. 102 063306. |
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| Added by: Laurent Cournède 2016-03-10 22:02:29 |
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| Rhallabi, A., Chanson, R., Landesman, J. .-P., Cardinaud, C. & Fernandez, M. .-C. (2011) Atomic scale study of InP etching by Cl-2-Ar ICP plasma discharge. Eur. Phys. J.-Appl. Phys, 53 33606. |
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| Added by: Laurent Cournède 2016-03-10 21:32:21 |
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| Sarrazin, A., Posseme, N., Barros, P. P., Barnola, S., Claveau, G., Gharbi, A., Argoud, M., Chamiot-Maitral, G., Tiron, R., Nicolet, C., Navarro, C. & Cardinaud, C. (2016) PMMA removal selectivity to PS using dry etch approach: Sub-10nm patterning application. Lin, Q. & Engelmann, S. U. (Eds.), Advanced Etch Technology for Nanopatterning V Bellingham. |
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| Last edited by: Richard Baschera 2017-02-02 13:40:29 |
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| Tsougeni, K., Vourdas, N., Tserepi, A., Gogolides, E. & Cardinaud, C. (2009) Mechanisms of Oxygen Plasma Nanotexturing of Organic Polymer Surfaces: From Stable Super Hydrophilic to Super Hydrophobic Surfaces. Langmuir, 25 11748–11759. |
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| Added by: Laurent Cournède 2016-03-10 21:41:23 |
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| Verger, F., Nazabal, V., Colas, F., Nemec, P., Cardinaud, C., Baudet, E., Chahal, R., Rinnert, E., Boukerma, K., Peron, I., Deputier, S., Guilloux-Viry, M., Guin, J. P., Lhermite, H., Moreac, A., Compere, C. & Bureau, B. (2013) RF sputtered amorphous chalcogenide thin films for surface enhanced infrared absorption spectroscopy. Opt. Mater. Express, 3 2112–2131. |
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| Added by: Laurent Cournède 2016-03-10 21:23:29 |
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