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Haidar, Y., Pateau, A., Rhallabi, A., Fernandez, M. C., Mokrani, A., Taher, F., Roqueta, F. & Boufnichel, M. (2014) SF6 and C4F8 global kinetic models coupled to sheath models. Plasma Sources Sci. Technol. 23 065037.   
Added by: Laurent Cournède 2016-03-10 21:01:54 Pop. 0.5%
Haidar, Y., Rhallabi, A., Pateau, A., Mokrani, A., Taher, F., Roqueta, F. & Boufnichel, M. (2016) Simulation of cryogenic silicon etching under SF6/O-2/Ar plasma discharge. J. Vac. Sci. Technol. A, 34 061306.   
Last edited by: Richard Baschera 2017-02-02 13:42:02 Pop. 0.5%
Le Dain, G., Rhallabi, A., Girard, A., Cardinaud, C., Roqueta, F. & Boufnichel, M. (2019) Modeling of C4F8 inductively coupled plasmas: effects of high RF power on the plasma electrical properties. Plasma Sources Science & Technology, 28 085002.   
Last edited by: Richard Baschera 2019-08-23 13:36:25 Pop. 0.5%
Le Dain, G., Rhallabi, A., Cardinaud, C., Girard, A., Fernandez, M.-C., Boufnichel, M. & Roqueta, F. (2018) Modeling of silicon etching using Bosch process: Effects of oxygen addition on the plasma and surface properties. Journal of Vacuum Science & Technology A, 36 03E109.   
Last edited by: Richard Baschera 2018-07-24 12:58:27 Pop. 0.5%
Le Dain, G., Rhallabi, A., Fernandez, M. C., Boufnichel, M. & Roqueta, F. (2017) Multiscale approach for simulation of silicon etching using SF6/C4F8 Bosch process. Journal of Vacuum Science & Technology A, 35 03E113.   
Last edited by: Richard Baschera 2017-07-07 14:56:51 Pop. 0.5%
Pateau, A., Rhallabi, A., Fernandez, M.-C., Boufnichel, M. & Roqueta, F. (2014) Modeling of inductively coupled plasma SF6/O-2/Ar plasma discharge: Effect of O-2 on the plasma kinetic properties. J. Vac. Sci. Technol. A, 32 021303.   
Added by: Florent Boucher 2016-04-29 09:26:44 Pop. 0.5%
wikindx 4.2.2 ©2014 | Références totales : 2612 | Requêtes métadonnées : 51 | Exécution de script : 0.21025 secs | Style : Harvard | Bibliographie : Bibliographie WIKINDX globale