IMN

Biblio. IMN

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Al Alam, E., Cortes, I., Besland, M. .-P., Goullet, A., Lajaunie, L., Regreny, P., Cordier, Y., Brault, J., Cazarre, A., Isoird, K., Sarrabayrouse, G. & Morancho, F. (2011) Effect of surface preparation and interfacial layer on the quality of SiO2/GaN interfaces. J. Appl. Phys. 109 084511.   
Added by: Laurent Cournède 2016-03-10 21:32:21 Pop. 0.75%
Corraze, B., Janod, E., Cario, L., Moreau, P., Lajaunie, L., Stoliar, P., Guiot, V., Dubost, V., Tranchant, J., Salmon, S., Besland, M. .-P., Phuoc, T. V., Cren, T., Roditchev, D., Stephant, N., Troadec, D. & Rozenberg, M. (2013) Electric field induced avalanche breakdown and non-volatile resistive switching in the Mott Insulators AM(4)Q(8). Eur. Phys. J.-Spec. Top. 222 1047–1056.   
Added by: Laurent Cournède 2016-03-10 21:23:30 Pop. 0.5%
Dubosc, M., Casimirius, S., Besland, M. .-P., Cardinaud, C., Granier, A., Duvail, J. .-L., Gohier, A., Minea, T., Arnal, V. & Torres, J. (2007) Impact of the Cu-based substrates and catalyst deposition techniques on carbon nanotube growth at low temperature by PECVD. Microelectron. Eng. 84 2501–2505.   
Added by: Laurent Cournède 2016-03-10 22:02:29 Pop. 0.5%
Duquenne, C., Besland, M. .-P., Tessier, P. Y., Gautron, E., Scudeller, Y. & Averty, D. (2012) Thermal conductivity of aluminium nitride thin films prepared by reactive magnetron sputtering. J. Phys. D-Appl. Phys. 45 015301.   
Added by: Laurent Cournède 2016-03-10 21:28:40 Pop. 0.5%
Ghamouss, F., Tessier, P. .-Y., Djouadi, M. A., Besland, M. .-P. & Boujtita, M. (2007) Examination of the electrochemical reactivity of screen printed carbon electrode treated by radio-frequency argon plasma. Electrochem. Commun. 9 1798–1804.   
Added by: Laurent Cournède 2016-03-10 22:02:30 Pop. 0.5%
Ghamouss, F., Tessier, P. .-Y., Djouadi, A., Besland, M. .-P. & Boujtita, M. (2007) Screen-printed carbon electrode modified on its surface with amorphous carbon nitride thin film: Electrochemical and morphological study. Electrochim. Acta, 52 5053–5061.   
Added by: Laurent Cournède 2016-03-10 22:02:30 Pop. 0.75%
Girault, B., Vidal, V., Thilly, L., Renault, P. .-O., Goudeau, P., LeBourhis, E., Villain-Valat, P., Geandier, G., Tranchant, J., Landesman, J. .-P., Tessier, P. .-Y., Angleraud, B., Besland, M. .-P., Djouadi, A. & Lecouturier, F. (2008) Small scale mechanical properties of polycrystalline materials: in situ diffraction studies. Int. J. Nanotechnol. 5 609–630.   
Added by: Laurent Cournède 2016-03-10 21:58:43 Pop. 0.75%
Han, J.-F., Liao, C., Jiang, T., Xie, H.-M., Zhao, K. & Besland, M. .-P. (2014) Investigation of chalcopyrite film growth at various temperatures: Analyses from top to the bottom of the thin films. J. Mater. Sci.-Mater. Electron. 25 2237–2243.   
Added by: Florent Boucher 2016-04-29 09:26:44 Pop. 0.5%
Han, J., Liao, C., Jiang, T., Xie, H., Zhao, K. & Besland, M. .-P. (2013) Investigation of copper indium gallium selenide material growth by selenization of metallic precursors. J. Cryst. Growth, 382 56–60.   
Added by: Laurent Cournède 2016-03-10 21:23:29 Pop. 1.25%
Han, J., Ouyang, L., Zhuang, D., Liao, C., Liu, J., Zhao, M., Cha, L.-M. & Besland, M. .-P. (2014) Raman and XPS studies of CIGS/Mo interfaces under various annealing temperatures. Mater. Lett. 136 278–281.   
Added by: Laurent Cournède 2016-03-10 21:01:54 Pop. 1%
Han, J.-F., Liao, C., Gautron, E., Jiang, T., Xie, H.-M., Zhao, K. & Besland, M. .-P. (2014) A study of different selenium sources in the synthesis processes of chalcopyrite semiconductors. Vacuum, 105 46–51.   
Added by: Laurent Cournède 2016-03-10 21:01:55 Pop. 0.75%
Han, J.-F., Ouyang, L.-Q., Zhuang, D.-M., Zhao, M., Liao, C., Liu, J., Cha, L. & Besland, M. .-P. (2015) Surface evolution of sputtered Cu(In,Ga)Se-2 thin films under various annealing temperatures. J. Mater. Sci.-Mater. Electron. 26 4840–4847.   
Added by: Laurent Cournède 2016-03-10 18:36:41 Pop. 0.5%
Han, J.-F., Liao, C., Cha, L.-M., Jiang, T., Xie, H.-M., Zhao, K. & Besland, M. .-P. (2014) TEM and XPS studies on CdS/CIGS interfaces. J. Phys. Chem. Solids, 75 1279–1283.   
Added by: Laurent Cournède 2016-03-10 21:01:54 Pop. 0.5%
Jun-feng, H., Cheng, L., Tao, J., Hua-mu, X., Kui, Z. & Besland, M. .-P. (2013) An optimized In-CuGa metallic precursors for chalcopyrite thin films. Thin Solid Films, 545 251–256.   
Added by: Laurent Cournède 2016-03-10 21:23:29 Pop. 0.5%
Querre, M., Tranchant, J., Corraze, B., Cordier, S., Bouquet, V., Deputier, S., Guilloux-Viry, M., Besland, M. .-P., Janod, E. & Cario, L. (2018) Non-volatile resistive switching in the Mott insulator (V1-xCrx)(2)O-3. Physica B-Condensed Matter, 536 327–330.   
Last edited by: Richard Baschera 2018-07-24 12:50:23 Pop. 0.5%
Rupp, J. A. J., Janod, E., Besland, M. .-P., Corraze, B., Kindsmüller, A., Querre, M., Tranchant, J., Cario, L., Dittmann, R., Waser, R. & Wouters, D. J. (2020) Competition between V2O3 phases deposited by one-step reactive sputtering process on polycrystalline conducting electrode. Thin Solid Films, 705 138063.   
Last edited by: Richard Baschera 2020-06-05 07:50:03 Pop. 1.25%
Salimy, S., Challali, F., Goullet, A., Besland, M. .-P., Carette, M., Gautier, N., Rhallabi, A., Landesman, J. P., Toutain, S. & Averty, D. (2013) Electrical Characteristics of TiTaO Thin Films Deposited on SiO2/Si Substrates by Magnetron Sputtering. ECS Solid State Lett. 2 Q13–Q15.   
Added by: Laurent Cournède 2016-03-10 21:23:32 Pop. 0.5%
Souchier, E., Besland, M. .-P., Tranchant, J., Corraze, B., Moreau, P., Retoux, R., Estournes, C., Mazoyer, P., Cario, L. & Janod, E. (2013) Deposition by radio frequency magnetron sputtering of GaV4S8 thin films for resistive random access memory application. Thin Solid Films, 533 54–60.   
Added by: Laurent Cournède 2016-03-10 21:23:31 Pop. 0.5%
Tranchant, J., Sandrini, J., Janod, E., Sacchetto, D., Corraze, B., Besland, M. .-P., Ghanbaja, J., De Micheli, G., Gaillardon, P. .-E. & Cario, L. (2017)
Control of Resistive Switching in Mott Memories Based on TiN/AM(4)Q(8)/TiN MIM Devices
. Shingubara, S., Karim, Z., MagyariKope, B., Shima, H., Kubota, H., Park, J. G., Kobayashi, K., Goux, L., Bersuker, G. & Saito, Y. (Eds.), Nonvolatile Memories 5.
 
 
Last edited by: Richard Baschera 2018-07-24 12:41:41 Pop. 0.5%
Tranchant, J., Pellaroque, A., Janod, E., Angleraud, B., Corraze, B., Cario, L. & Besland, M. .-P. (2014) Deposition of GaV4S8 thin films by H2S/Ar reactive sputtering for ReRAM applications. J. Phys. D-Appl. Phys. 47 065309.   
Added by: Florent Boucher 2016-04-29 09:26:45 Pop. 0.5%
Tranchant, J., Janod, E., Cario, L., Corraze, B., Souchier, E., Leclercq, J. .-L., Cremillieu, P., Moreau, P. & Besland, M. .-P. (2013) Electrical characterizations of resistive random access memory devices based on GaV4S8 thin layers. Thin Solid Films, 533 61–65.   
Added by: Laurent Cournède 2016-03-10 21:23:31 Pop. 0.5%
Tranchant, J., Janod, E., Corraze, B., Besland, M. .-P. & Cario, L. (2015) From resistive switching mechanisms in AM(4)Q(8) Mott insulators to Mott memories. 2015 Ieee 7th International Memory Workshop (imw) New York.   
Last edited by: Richard Baschera 2016-09-12 09:10:34 Pop. 0.75%
Tranchant, J., Querre, M., Janod, E., Besland, M. .-P., Corraze, B. & Cario, L. 2018. Mott memory devices based on the Mott insulator (V1-xCrx)(2)O-3. Paper read at 2018 IEEE 10TH INTERNATIONAL MEMORY WORKSHOP (IMW).   
Last edited by: Richard Baschera 2018-12-20 08:11:35 Pop. 0.5%
wikindx 4.2.2 ©2014 | Références totales : 2615 | Requêtes métadonnées : 120 | Exécution de script : 0.23717 secs | Style : Harvard | Bibliographie : Bibliographie WIKINDX globale