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Adda, C., Tranchant, J., Stoliar, P., Corraze, B., Janod, E., Gay, R., Llopis, R., Besland, M.-P., Hueso, L. E. & Cario, L. (2017) An artificial neuron founded on resistive switching of Mott insulators. 2017 Ieee 9th International Memory Workshop (imw).   
Last edited by: Richard Baschera 2017-10-24 13:35:47 Pop. 0.75%
Adda, C., Cario, L., Trenchant, J., Janod, E., Besiand, M.-P., Rozenberg, M., Stoliar, P. & Corraze, B. (2018) First demonstration of "Leaky Integrate and Fire" artificial neuron behavior on (V0.95Cr0.05)(2)O-3 thin film. MRS Commun. 8 835–841.   
Last edited by: Richard Baschera 2018-12-20 08:28:45 Pop. 0.75%
Adda, C., Corraze, B., Stoliar, P., Diener, P., Tranchant, J., Filatre-Furcate, A., Fourmigue, M., Lorcy, D., Besland, M.-P., Janod, E. & Cario, L. (2018) Mott insulators: A large class of materials for Leaky Integrate and Fire (LIF) artificial neuron. J. Appl. Phys. 124 152124.   
Last edited by: Richard Baschera 2018-12-19 13:41:58 Pop. 1%
Golmar, F., Stoliar, P., Monton, C., Valmianski, I., Schuller, I. K., Hueso, L. E. & Casanova, F. (2015) Cobalt phthalocyanine-based submicrometric field-effect transistors. Phys. Status Solidi A-Appl. Mat. 212 607–611.   
Last edited by: Richard Baschera 2021-04-27 12:33:32 Pop. 0.75%
Janod, E., Tranchant, J., Corraze, B., Querre, M., Stoliar, P., Rozenberg, M., Cren, T., Roditchev, D., Phuoc, V. T., Besland, M.-P. & Cario, L. (2015) Resistive Switching in Mott Insulators and Correlated Systems. Adv. Funct. Mater. 25 6287–6305.   
Last edited by: Richard Baschera 2020-04-07 13:02:41 Pop. 0.5%
Stoliar, P., Tranchant, J., Corraze, B., Janod, E., Besland, M.-P., Tesler, F., Rozenberg, M. & Cario, L. (2017) A Leaky-Integrate-and-Fire Neuron Analog Realized with a Mott Insulator. Adv. Funct. Mater. 27 1604740.   
Last edited by: Richard Baschera 2017-04-11 13:30:43 Pop. 0.5%
Stoliar, P., Diener, P., Tranchant, J., Corraze, B., Briere, B., Ta-Phuoc, V., Bellec, N., Fourmigue, M., Lorcy, D., Janod, E. & Cario, L. (2015) Resistive Switching Induced by Electric Pulses in a Single-Component Molecular Mott Insulator. J. Phys. Chem. C, 119 2983–2988.   
Added by: Laurent Cournède 2016-03-10 18:36:42 Pop. 0.5%
Stoliar, P., Cario, L., Janod, E., Corraze, B., Guillot-Deudon, C., Salmon-Bourmand, S., Guiot, V., Tranchant, J. & Rozenberg, M. (2013) Universal Electric-Field-Driven Resistive Transition in Narrow-Gap Mott Insulators. Adv. Mater. 25 3222–3226.   
Added by: Laurent Cournède 2016-03-10 21:23:30 Pop. 0.5%
Tesler, F., Adda, C., Tranchant, J., Corraze, B., Janod, E., Cario, L., Stoliar, P. & Rozenberg, M. (2018) Relaxation of a Spiking Mott Artificial Neuron. Phys. Rev. Appl. 10 054001.   
Last edited by: Richard Baschera 2018-12-20 08:29:47 Pop. 0.5%
Tranchant, J., Janod, E., Corraze, B., Stoliar, P., Rozenberg, M., Besland, M.-P. & Cario, L. (2015) Control of resistive switching in AM(4)Q(8) narrow gap Mott insulators: A first step towards neuromorphic applications. Phys. Status Solidi A-Appl. Mat. 212 239–244.   
Last edited by: Richard Baschera 2020-04-07 14:51:37 Pop. 0.5%
wikindx 4.2.2 ©2014 | Références totales : 2699 | Requêtes métadonnées : 68 | Exécution de script : 0.21849 secs | Style : Harvard | Bibliographie : Bibliographie WIKINDX globale