IMN

Biblio. IMN

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Thupakula, U., Perrin, V., Palacio-Morales, A., Cario, L., Aprili, M., Simon, P. & Massee, F. (2022) Coherent and Incoherent Tunneling into Yu-Shiba-Rusinov States Revealed by Atomic Scale Shot-Noise Spectroscopy. Phys. Rev. Lett. 128 247001.   
Last edited by: Richard Baschera 2022-07-08 08:48:36 Pop. 4.75%
Tissen, V. G., Osorio, M. R., Brison, J. P., Nemes, N. M., Garcia-Hernandez, M., Cario, L., Rodiere, P., Vieira, S. & Suderow, H. (2013) Pressure dependence of superconducting critical temperature and upper critical field of 2H-NbS2. Phys. Rev. B, 87.   
Added by: Laurent Cournède 2016-03-10 21:23:31 Pop. 0.5%
Tranchant, J., Sandrini, J., Janod, E., Sacchetto, D., Corraze, B., Besland, M. .-P., Ghanbaja, J., De Micheli, G., Gaillardon, P. .-E. & Cario, L. (2017)
Control of Resistive Switching in Mott Memories Based on TiN/AM(4)Q(8)/TiN MIM Devices
. Shingubara, S., Karim, Z., MagyariKope, B., Shima, H., Kubota, H., Park, J. G., Kobayashi, K., Goux, L., Bersuker, G. & Saito, Y. (Eds.), Nonvolatile Memories 5.
 
 
Last edited by: Richard Baschera 2018-07-24 12:41:41 Pop. 0.5%
Tranchant, J., Pellaroque, A., Janod, E., Angleraud, B., Corraze, B., Cario, L. & Besland, M. .-P. (2014) Deposition of GaV4S8 thin films by H2S/Ar reactive sputtering for ReRAM applications. J. Phys. D-Appl. Phys. 47 065309.   
Added by: Florent Boucher 2016-04-29 09:26:45 Pop. 0.5%
Tranchant, J., Janod, E., Cario, L., Corraze, B., Souchier, E., Leclercq, J. .-L., Cremillieu, P., Moreau, P. & Besland, M. .-P. (2013) Electrical characterizations of resistive random access memory devices based on GaV4S8 thin layers. Thin Solid Films, 533 61–65.   
Added by: Laurent Cournède 2016-03-10 21:23:31 Pop. 0.5%
Tranchant, J., Janod, E., Corraze, B., Besland, M. .-P. & Cario, L. (2015) From resistive switching mechanisms in AM(4)Q(8) Mott insulators to Mott memories. 2015 Ieee 7th International Memory Workshop (imw) New York.   
Last edited by: Richard Baschera 2016-09-12 09:10:34 Pop. 0.5%
Tranchant, J., Querre, M., Janod, E., Besland, M. .-P., Corraze, B. & Cario, L. 2018. Mott memory devices based on the Mott insulator (V1-xCrx)(2)O-3. Paper read at 2018 IEEE 10TH INTERNATIONAL MEMORY WORKSHOP (IMW).   
Last edited by: Richard Baschera 2018-12-20 08:11:35 Pop. 0.5%
Vaju, C., Cario, L., Corraze, B., Janod, E., Dubost, V., Cren, T., Roditchev, D., Braithwaite, D. & Chauvet, O. (2008) Electric-pulse-induced resistive switching and possible superconductivity in the Mott insulator GaTa4Se8. Microelectron. Eng. 85 2430–2433.   
Added by: Laurent Cournède 2016-03-10 21:58:40 Pop. 0.5%
Vaju, C., Martial, J., Janod, E., Corraze, B., Fernandez, V. & Cario, L. (2008) Metal-metal bonding and correlated metallic behavior in the new deficient spinel Ga0.87Ti4S8. Chem. Mat. 20 2382–2387.   
Added by: Laurent Cournède 2016-03-10 21:58:42 Pop. 0.5%
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