Bouchoule, S., Vallier, L., Patriarche, G., Chevolleau, T. & Cardinaud, C. (2012) Effect of Cl-2- and HBr-based inductively coupled plasma etching on InP surface composition analyzed using in situ x-ray photoelectron spectroscopy. J. Vac. Sci. Technol. A, 30 031301. |
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Bouchoule, S., Chanson, R., Pageau, A., Cambril, E., Guilet, S., Rhallabi, A. & Cardinaud, C. (2015) Surface chemistry of InP ridge structures etched in Cl-2-based plasma analyzed with angular XPS. J. Vac. Sci. Technol. A, 33 05E124. |
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Boulard, F., Baylet, J. & Cardinaud, C. (2009) Effect of Ar and N-2 addition on CH4-H-2 based chemistry inductively coupled plasma etching of HgCdTe. J. Vac. Sci. Technol. A, 27 855–861. |
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Chanson, R., Rhallabi, A., Fernandez, M. C., Cardinaud, C. & Landesman, J. P. (2013) Modeling of inductively coupled plasma Ar/Cl-2/N-2 plasma discharge: Effect of N-2 on the plasma properties. J. Vac. Sci. Technol. A, 31 011301. |
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Elmonser, L., Rhallabi, A., Gaillard, M., Landesman, J. P., Talneau, A., Pommereau, F. & Bouadma, N. (2007) Modeling of the chemically assisted ion beam etching process: Application to the GaAs etching by Cl-2/Ar+. J. Vac. Sci. Technol. A, 25 126–133. |
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Added by: Laurent Cournède 2016-03-10 22:02:31 |
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Haidar, Y., Rhallabi, A., Pateau, A., Mokrani, A., Taher, F., Roqueta, F. & Boufnichel, M. (2016) Simulation of cryogenic silicon etching under SF6/O-2/Ar plasma discharge. J. Vac. Sci. Technol. A, 34 061306. |
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Lallement, L., Gosse, C., Cardinaud, C., Peignon-Fernandez, M. .-C. & Rhallabi, A. (2010) Etching studies of silica glasses in SF6/Ar inductively coupled plasmas: Implications for microfluidic devices fabrication. J. Vac. Sci. Technol. A, 28 277–286. |
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Added by: Laurent Cournède 2016-03-10 21:37:33 |
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Lallement, L., Rhallabi, A., Cardinaud, C. & Fernandez, M. C. P. (2011) Modelling of fluorine based high density plasma for the etching of silica glasses. J. Vac. Sci. Technol. A, 29 051304. |
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Added by: Laurent Cournède 2016-03-10 21:32:20 |
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Pateau, A., Rhallabi, A., Fernandez, M.-C., Boufnichel, M. & Roqueta, F. (2014) Modeling of inductively coupled plasma SF6/O-2/Ar plasma discharge: Effect of O-2 on the plasma kinetic properties. J. Vac. Sci. Technol. A, 32 021303. |
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Added by: Florent Boucher 2016-04-29 09:26:44 |
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